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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/956| EELS characterization of TiN grown by the DC sputtering technique | |
| JOSE ALBERTO DUARTE MOLLER MIGUEL AVALOS BORJA | |
| Acceso Abierto | |
| Sin Derechos Reservados | |
| TiN EXELFS | |
| Titanium nitride thin films were deposited on monocrystalline silicon (mc-Si) substrates by direct current reactive magnetron sputtering. Auger electron spectra (AES) of deposited films at different nitrogen partial pressures, show the typical N KL23L23 and Ti L3M23M23 Auger transition overlapping. Also, changes in the Ti L3M23M45 Auger transition peak are observed. X-ray diffraction and high resolution electron microscopy (HRTEM) of a golden color TiN/ mc-Si sample, reveal a preferential polycrystalline columnar growth in the k111l orientation. This sample was also analyzed by electron energy-loss spectroscopy (EELS). The N/Ti elemental ratio is slightly different to the value determined by AES. Atomic distribution around the N atoms is in agreement with that expected from the N atom in the fcc unit cell of TiN. This distribution was obtained via an extended energy-loss fine structure (EXELFS) analysis from EELS spectra. | |
| 1999 | |
| Artículo | |
| Inglés | |
| OTRAS | |
| Versión revisada | |
| submittedVersion - Versión revisada | |
| Aparece en las colecciones: | Artículos |
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| EELS characterization of TiN grown by the DC sputtering technique PDF 1999.pdf | 215.38 kB | Adobe PDF | Visualizar/Abrir |