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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/1345| Zinc Doped SnO2 Electronic Structure Study by EELS | |
| VERONICA GALLEGOS OROZCO CARLOS ELIAS ORNELAS GUTIERREZ WILBER ANTUNEZ FLORES AUDEL SANTOS BELTRAN FRANCISCO PARAGUAY DELGADO | |
| Acceso Abierto | |
| Sin Derechos Reservados | |
| SnO2 | |
| Tin dioxide (SnO2) is a wide bandgap semiconductor (Eg=3.6 eV at 300 K). SnO2 has recently received a large interest because of its multiple technological applications, including gas sensors, solar cells, optoelectronic devices, flat panel displays, architectural windows and catalysts, owing to its good optical and electrical properties and excellent chemical and thermal stability [1]. It is well known that the enhanced dielectric behaviors can be observed in some metal oxide nanostructures, such as SnO2 nanoparticles, Al2O3 nanobelts and MgO nanoflowers due to their great space charge polarization process [2]. The concentration of oxygen vacancies as native defects can influence the optical and electrical properties of the SnO2 nanoflowers like morphology. Changes in the electronic structure and morphology of SnO2 nanoflowers like as a function of dopants level were investigated in this work. | |
| 2013 | |
| Memoria de congreso | |
| Inglés | |
| OTRAS | |
| Versión revisada | |
| submittedVersion - Versión revisada | |
| Aparece en las colecciones: | Artículos de Congresos |
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| M&M2013 FC Vasquez.pdf | 376.84 kB | Adobe PDF | Visualizar/Abrir |