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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/1551| Si nanocrystals deposited by HFCVD | |
| JORGE ALBERTO LUNA LOPEZ GODOFREDO GARCIA SALGADO DIANA ELIZABETH VAZQUEZ VALERDI ARTURO PONCE PEDRAZA TOMAS FRANCISCO DIAZ BECERRIL | |
| Acceso Abierto | |
| Sin Derechos Reservados | |
| SiOx PL Si-nc | |
| The structural and optical properties of Si nanocrystal embedded in a matrix of offstoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapor deposition technique were studied. The films emit a wide photoluminescent spectrum from 400 nm to 800 nm and the maximum peak emission shows a blue-shift as the substrate temperature decreases. Also, a wavelength-shift of the absorption edge in transmittance spectra is observed, indicating an increase in the energy band gap. The Si nanocrystals size decreases from 6.5 to 2.5 nm as the substrate temperature is reduced from 1150 to 900 °C, as measured through High Resolution Transmission Electron Microscopy. A combination of mechanisms is proposed to explain the photoluminescence in the SiOx films, involving SiOx defects and quantum confinement effects. | |
| 2012 | |
| Memoria de congreso | |
| Inglés | |
| OTRAS | |
| Versión revisada | |
| submittedVersion - Versión revisada | |
| Aparece en las colecciones: | Artículos de Congresos |
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| Si nanocrystals deposited by HFCVD.pdf | 637.87 kB | Adobe PDF | Visualizar/Abrir |