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Surface-Barrier Solar Cells Based On Monocrystalline Cadmium Telluride with the Modified Boundary
PAUL HORLEY
Acceso Abierto
Sin Derechos Reservados
SOLAR CELLS
Cadmium telluride is one of the most promising materials for solar cell (SC) applications due to its unique physical and chemical parameters. In the first place, it has the band gap Eg ≈ 1.5 eV (300 K) close to the optimal value for photovoltaic conversion (Fahrenbruch & Bube, 1983; Donnet, 2001). The highest temperature and radiation stability of CdTe in comparison with Si and GaAs (Ryzhikov, 1989; Korbutyak et al., 2000) permits to use SCs based on cadmium telluride under elevated temperatures and a considerable flux of ionizing radiation. The possible alternative to CdTe with the similar band gap – gallium arsenide and its solid solutions – are far more difficult to obtain and expensive due to the rarity of Ga (Mizetskaya et al., 1986; Kesamanly & Nasledov, 1973; Andreev et al., 1975).
2010
Capítulo de libro
Inglés
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