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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/1873| Silicon-Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition to Develop Silicon Light Sources | |
| JESUS ALARCON SALAZAR ROSA ELVIA LOPEZ ESTOPIER ENRIQUE QUIROGA GONZALEZ JORGE MIGUEL PEDRAZA CHAVEZ IGNACIO ENRIQUE ZALDIVAR HUERTA MARIANO ACEVES MIJARES | |
| Acceso Abierto | |
| Sin Derechos Reservados | |
| SRO photoluminescence | |
| Off stoichiometric silicon oxide, also known as silicon-rich oxide (SRO), is a lightemitting material that is compatible with silicon technology; therefore, it is a good candidate to be used as a light source in all-silicon optoelectronic circuits. The SRO obtained by low-pressure chemical vapor deposition (LPCVD) has shown the best luminescent properties compared to other techniques. In spite of LPCVD being a simple technique, it is not a simple task to obtain SRO with exact silicon excess in a reliable and repetitive way. In this work, the expertise obtained in our group to obtain SRO by LPCVD with precise variation is presented. Also, the characteristics of this SRO obtained in our group are revised and discussed. It is demonstrated that LPCVD is an excellent technique to obtain single layers and multilayers of nanometric single layers with good characteristics. | |
| 2015 | |
| Capítulo de libro | |
| Inglés | |
| OTRAS | |
| Versión revisada | |
| submittedVersion - Versión revisada | |
| Aparece en las colecciones: | Libros |
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| Fichero | Tamaño | Formato | |
|---|---|---|---|
| Silicon Rich Oxide Obtained by Low Pressure Chemical Vapor Deposition to Develop Silicon Light Sources.pdf | 27.82 MB | Adobe PDF | Visualizar/Abrir |