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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/229| Study of amorphous InGaZnO thin film deposited by pulsed laser deposition for flexible electronic applications | |
| RODOLFO ANTONIO RODRIGUEZ DAVILA | |
| EDUARDO MARTINEZ GUERRA | |
| Acceso Abierto | |
| Atribución | |
| The effect of oxygen pressure on the structural, morphological, chemical, optical and electrical properties of amorphous InGaZnO (a-IGZO) deposited by pulsed laser deposition, at room temperature, is investigated. Films were prepared on highly doped p-type silicon <100> and glass as substrates. X-ray diffraction spectroscopy (XRD) measurements showed that all films exhibit an amorphous structure. Also, the morphological analysis shows that the roughness of the films increase as pressure increase, but, despite this, all films showed smooth and uniform surfaces with RMS roughness less than 2 nm. Furthermore, The X-ray photoelectron spectroscopy (XPS) analysis indicates that there are no metallic states of In, Ga or Zn. However, the oxygen vacancies concentration decreases as pressure increases, suggesting that the oxygen vacancies could be the main defects that affect the physical properties of the film. The energy gap changes from 3.08 to 3.41 eV with increasing oxygen pressure. Also, small band tails (less than 0.07 eV) where found for all the films. The electrical resistivity change from 2x10 -2 Ω•cm to 1.6x107 Ω•cm as pressure increase from 10 to 30 mTorr, exhibiting highly dependence with the oxygen pressure. This trend is in accordance with the XPS results. Furthermore, films show degenerated conduction for Ne>2x1019 cm-3 and percolation hopping conduction over potential barriers, formed around the conduction band bottom, for Ne < 2x1019 cm-3 . Films deposited at 30 mTorr were used as active channel in TFTs with bottom common gate staggered structure. A field effect mobility of 2.09 cm2V -1s -1 , subthreshold swing of 0.1 V/dec, an Ion/Ioff >106 and Ioff < 10-10 A were found. The results suggest that a-IGZO could replace a-Si:H in the new generation of LCDs, but more study is required to increase the TFT performance. | |
| 2014-02 | |
| Tesis de maestría | |
| Inglés | |
| QUÍMICA | |
| Versión aceptada | |
| acceptedVersion - Versión aceptada | |
| Aparece en las colecciones: | Maestría en Energías Renovables |
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| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| Tesis Rodolfo Antonio Rodriguez Davila.pdf | 6.32 MB | Adobe PDF | Visualizar/Abrir |