Please use this identifier to cite or link to this item: http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2363
Annealing Effect on the Structural and Optical Properties of SiOx films deposited by HFCVD
José Alberto Luna López
ALFREDO BENITEZ LARA
GODOFREDO GARCIA SALGADO
JOSE ALVARO DAVID HERNANDEZ DE LA LUZ
MAURICIO PACIO CASTILLO
Alfredo Morales Sánchez
SILVIA ADRIANA PEREZ GARCIA
Acceso Abierto
Sin Derechos Reservados
SiOx Films, HFCVD, Optical Sensor
Non-stoichiometric silicon oxide (SiOx) with embedded Si nanoparticles (Si-nps) shows novel physical characteristic, which permits its use in optoelectronic devices as photodetectors and light emitters. In this work, a detailed analysis of the structural and optical properties of silicon rich oxide films deposited via hot filament chemical vapor deposition is done. SiOx films with different Si content were obtained at different hydrogen flow. FTIR spectra show vibrational bands related to the presence of hydrogen in as-deposited SiOx films. This band is more intense as the hydrogen flow is increased, but disappears after thermal annealing. SiOx films exhibit a broad photoluminiscence (PL) spectra with main peaks at 700 and 750 nm. The PL band at 700 nm is enhanced as the hydrogen content in the SiOx films is increased. XPS spectra show a high Si concentration and a low oxygen concentration in the SiOx films. Transmittance spectra have a shifted to high wavelength after thermal annealing, and optical band gap was from 2.34 to 3.95 eV.
2014
Artículo
Inglés
PROPIEDADES DE LOS MATERIALES
Versión aceptada
acceptedVersion - Versión aceptada
Appears in Collections:Artículos en Congresos

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