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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2372| Impact of the structural characteristics on the performance of light emitting capacitors using nanometric SRO multilayers fabricated by LPCVD | |
| Alfredo Morales Sánchez Jesús Alarcón Salazar Ignacio Enrique Zaldívar Huerta MARIANO ACEVES MIJARES | |
| Acceso Abierto | |
| Atribución-SinDerivadas | |
| This work relates the electrical, luminescent and morphological characteristics of two light emitting capacitors composed by multilayers of Silicon Rich Oxide (SRO). Multilayers alternate four conductive SRO layers (silicon excess of 12 or 14 at %) with three emitting SRO layers (silicon excess of 6 at %). Transmission electron microscopy reveals that multilayers present welldefined layers. Furthermore, it was found that layers with high silicon content induce growing of Si-nanocristals size on layers with lower silicon excess. After the first current versus voltage measurement, electroforming produces arrays of trajectories with high silicon content. These conductive paths allow that the LEC achieves higher currents with lower voltages, preserving the emitting characteristics of SRO layers. Consequently, the electroluminescence intensity is improved as well as the blue emission depending on the conductive SRO layers | |
| 2016 | |
| Objeto de congreso | |
| ELECTROQUÍMICA | |
| Aparece en las colecciones: | Artículos de Congresos |
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| Procedia Engineering 1.pdf | 440.58 kB | Adobe PDF | Visualizar/Abrir |