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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2429| Synthesis and Luminescent Properties of Silicon Nanocrystals | |
| ANTONIO COYOPOL SOLIS GODOFREDO GARCIA SALGADO LILIANA PALACIOS HUERTA Alfredo Morales Sánchez | |
| Acceso Abierto | |
| Atribución-NoComercial | |
| Abstract Nowadays, study of silicon-based visible light-emitting devices has increased due to large-scale microelectronic integration. Since then different physical and chemical processes have been performed to convert bulk silicon (Si) into a light-emitting material. From discovery of Photoluminescence (PL) in porous Silicon by Canham, a new field of research was opened in optical properties of the Si nanocrystals (Si-NCs) embedded in a dielectric matrix, such as SRO (silicon-rich oxide) and SRN (silicon-rich nitride). In this respect, SRO films obtained by sputtering technique have proved to be an option for light-emitting capacitors (LECs). For the synthesis of SRO films, growth parameters should be considered; Si-excess, growth temperature and annealing temperature. Such parameters affect generation of radiative defects, distribution of Si-NCs and luminescent properties. In this chapter, we report synthesis, structural and luminescent properties of SRO monolayers and SRO/SiO2 multilayers (MLs) obtained by sputtering technique modifying Si-excess, thickness and thermal treatments. | |
| 23-01-2018 | |
| Artículo | |
| Inglés | |
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| publishedVersion - Versión publicada | |
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| Chapter 1 Synthesis and Luminescent Properties of Silicon Nanocrystals.pdf | 3.33 MB | Adobe PDF | Visualizar/Abrir |