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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2431| Silicon-Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition to Develop Silicon Light Sources | |
| Jesús Alarcón Salazar ROSA ELVIA LOPEZ ESTOPIER ENRIQUE QUIROGA GONZALEZ Alfredo Morales Sánchez Jorge Miguel Pedraza Chávez Ignacio Enrique Zaldívar Huerta MARIANO ACEVES MIJARES | |
| Acceso Abierto | |
| Atribución-NoComercial | |
| Abstract Off stoichiometric silicon oxide, also known as silicon-rich oxide (SRO), is a lightemitting material that is compatible with silicon technology; therefore, it is a good candidate to be used as a light source in all-silicon optoelectronic circuits. The SRO obtained by low-pressure chemical vapor deposition (LPCVD) has shown the best luminescent properties compared to other techniques. In spite of LPCVD being a simple technique, it is not a simple task to obtain SRO with exact silicon excess in a reliable and repetitive way. In this work, the expertise obtained in our group to obtain SRO by LPCVD with precise variation is presented. Also, the characteristics of this SRO obtained in our group are revised and discussed. It is demonstrated that LPCVD is an excellent technique to obtain single layers and multilayers of nanometric single layers with good characteristics. | |
| 10-03-2016 | |
| Capítulo de libro | |
| Inglés | |
| CIENCIAS FÍSICO MATEMÁTICAS Y CIENCIAS DE LA TIERRA | |
| Versión publicada | |
| publishedVersion - Versión publicada | |
| Aparece en las colecciones: | Libros |
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| Fichero | Tamaño | Formato | |
|---|---|---|---|
| Chapter 7 - SRO obtained by LPCVD to develop silicon light sources.pdf | 16.77 MB | Adobe PDF | Visualizar/Abrir |