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http://cimav.repositorioinstitucional.mx/jspui/handle/1004/328| Epitaxial growth of strained Mn5Ge3 nanoislands on Ge(001) | |
| SION FEDERICO OLIVE MENDEZ | |
| Acceso Abierto | |
| Atribución-NoComercial-SinDerivadas | |
| http://dx.doi.org/10.1002/pssb.201451747 | |
| We report on the epitaxial growth of Mn5Ge3 on Ge(001) by molecular beam epitaxy using solid phase epitaxy method. Mn5Ge3 grows as nanoislands, which are randomly distributed over the substrate surface. Select area electron diffraction analysis was used to determine the epitaxial relationship Mn5Ge3(001)[110]//Ge(001)[110], as well as to detect an induced tensile strain along [110] Mn5Ge3 direction to fit the Ge lattice, while the observation of Moiré patterns indicates a complete relaxation along the math formula direction. In-plane and out-of-plane M(H) loops were obtained at 200 K using a vibrating sample magnetometer, it was found that the easy axis of magnetization is perpendicular to the substrate surface and that the crystal magnetic anisotropy is K1 = 9.27 × 105 erg cm−3. The enhancement of the Curie temperature of the nanoislands ∼340 K, which is higher than 296 K of the bulk Mn5Ge3, is attributed to the induced strains. | |
| 2015 | |
| Artículo | |
| Inglés | |
| Méndez, O., Sion, F., Michez, L. A., Spiesser, A., & LeThanh, V. (2015). Epitaxial growth of strained Mn5Ge3 nanoislands on Ge (001). physica status solidi (b), 252(8), 1854-1859. | |
| BIOLOGÍA Y QUÍMICA | |
| Aparece en las colecciones: | Artículos |
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| Epitaxial growth of strained Mn5Ge3 nanoislands on Ge(001).pdf | 835 kB | Adobe PDF | Visualizar/Abrir |