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Modification of crystal anisotropy and enhancement of magnetic moment of Co-doped SnO2 thin films annealed under magnetic field
FRANCISCO ESPINOSA MAGAÑA
SION FEDERICO OLIVE MENDEZ
HILDA ESPERANZA ESPARZA PONCE
Acceso Abierto
Atribución-NoComercial-SinDerivadas
http://dx.doi.org/10.1186/1556-276X-9-635
Co-doped SnO2 thin films were grown by sputtering technique on SiO2/Si(001) substrates at room temperature, and then, thermal treatments with and without an applied magnetic field (HTT) were performed in vacuum at 600°C for 20 min. HTT was applied parallel and perpendicular to the substrate surface. Magnetic M(H) measurements reveal the coexistence of a strong antiferromagnetic (AFM) signal and a ferromagnetic (FM) component. The AFM component has a Néel temperature higher than room temperature, the spin axis lies parallel to the substrate surface, and the highest magnetic moment m =7 μB/Co at. is obtained when HTT is applied parallel to the substrate surface. Our results show an enhancement of FM moment per Co+2 from 0.06 to 0.42 μB/Co at. for the sample on which HTT was applied perpendicular to the surface. The FM order is attributed to the coupling of Co+2 ions through electrons trapped at the site of oxygen vacancies, as described by the bound magnetic polaron model. Our results suggest that FM order is aligned along [101] direction of Co-doped SnO2 nanocrystals, which is proposed to be the easy magnetization axis.
2014
Artículo
Inglés
Loya-Mancilla, S. M., Poddar, P., Das, R., Ponce, H. E. E., Templeton-Olivares, I. L., Solis-Canto, O. O., ... & Olive-Méndez, S. F. (2014). Modification of crystal anisotropy and enhancement of magnetic moment of Co-doped SnO2 thin films annealed under magnetic field. Nanoscale research letters, 9(1), 635.
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