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Structural, optical and electrical properties of ZnO thin films grown by radio frequency (rf) sputtering in oxygen atmosphere
JOSE ALBERTO DUARTE MOLLER
PEDRO SANCHEZ SANTIAGO
Acceso Abierto
Sin Derechos Reservados
Zinc oxide
buffer layer
electrical resistance
Growth conditions for ZnO thin films were found for their potential use as a buffer layer in CdTe/CdS solar cells. Electrical, optical and structural properties were investigated as a function of the oxygen pressure during the growth of ZnO by radio frequency (rf) sputtering. The electrical behavior is explained in terms of the structural properties. Our results suggest that optimal oxygen partial pressure is 4 Pa for attaining a ZnO thin film as a buffer layer, with resistivity on the order of 103 Ω cm and an average of optical transmission of 89%.
16-11-2011
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